Epitaxy of strainedSi on the obtained SGOI substrate.
在获得的SGOI衬底材料上生长高质量应变硅材料。
2
The formation mechanism, energy band, hole density-of-state effective mass of strainedsi have been analyzed first., then hole mobility enhancement mechanism is analyzed.
首先分析了应变硅形成机理、能带结构变化、空穴态密度有效质量,进而分析了空穴迁移率增强机理。
3
The main work is focused on models of hole scattering mechanisms and hole mobility which is related to the crystal orientations and stress of strainedSi.