Strained silicon is a fundamental component of all recent microprocessors. The reason for its success is that local strain-induced deformation in the crystal lattice improves processor performance.
“变形”硅是所有最新的处理器的基本组成部分，原因是：晶格里应变诱发的形变提升了处理器的性能。
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The main work is focused on models of hole scattering mechanisms and hole mobility which is related to the crystal orientations and stress of strained Si.