An opening is formed at the second metal layer above the etch stop layer to expose the etch stoppinglayer.
在蚀刻停止层上方的第二金属层形成一开口,使蚀刻停止层暴露出来。
2
The invention discloses an etching stoppinglayer comprising a nitrogenous silicon carbide layer formed on a substrate and a silicon nitride layer formed on the silicon carbide layer.