The parameters deciding the quality in polishing process are as follows: slurry, temperature, wafering time, and so on.
抛光过程中决定抛光质量的参数有：抛光浆体、抛光温度、抛光时间等。
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The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.
Single stage re-circulation filtrations were performed to remove oversized particles from colloidal silica based Chemical-Mechanical Polishing (CMP) slurry.