Considering the tunneling effect and the Schottkyeffect, the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.
运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应。
2
A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.