The results have shown that the doping profile of the low pressure epitaxy of silane is steeper than those of silane epitaxy and silicon tetrachloride epitaxy at atmosphere pressure.
结果表明，与硅烷常压外延和四氯化硅常压外延相比，硅烷低压外延的杂质分布更为陡峭。
2
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
3
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.