The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
而最新的晶体管体积很小,掺杂沟道时只需在硅中置入少量掺杂原子。
2
Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.
掺杂是制备硅纳米线半导体器件的一个有效手段。
3
The results have shown that the doping profile of the low pressure epitaxy of silane is steeper than those of silane epitaxy and silicon tetrachloride epitaxy at atmosphere pressure.