To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicondevice.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
2
The physical properties of the material help determine which wavelengths of light will be perfectly absorbed; for the initial silicondevice the sweet spot is in the near infrared.
材料的物理性质有助于确定哪一种波长的光可以被完全吸收，对于最初的硅器件来说，吸收点在近红外。
3
Figure 2-1 (a) shows the physical representation of the BJT in its common-emitter orientation, and also shows typical voltage polarities and magnitudes for the case of a silicondevice.