A new device structure of siliconbipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
2
The necessity of setting the bias current and segregation resistances in every element of bipolarsilicon photo-negative resistance phototransistor array is studied and analysed.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
3
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.