To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.
为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
2
The photon-activated monopole domain in a semi-insulating multi-valley photoconductive semiconductor switch and the dipole domain in a Gunn device are compared.
摘要对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制。
3
Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.