The photon-activated monopole domain in a semi-insulating multi-valley photoconductive semiconductorswitch and the dipole domain in a Gunn device are compared.
摘要对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制。
2
ffAustin (TX) - Semiconductor companies began making the switch from 200mm to 300m wafers in the early 2000s. The push is now on toward 450mm by 2012.
半导体公司于2000年初期就开始从200mm晶圆转换到300mm技术。
3
Based on Semiconductor Opening switch (SOS) effect, the SOS can switch off current of great density within nanoseconds, which is applied to pulse power generator of inductive energy storage.