The semiconductorjunction diode comprises silicon, the silicon crystallized in contact with a silicide.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
2
The source region and the drain region comprise a semiconductorjunction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
3
According to the nonlinear re-radiation characteristic of semiconductor PN node, the nonlinear node detection system for semiconductorjunction targets based on second harmonic reception is designed.