The invention is a preparation method of metal silicidefilm by microwave hydrogen plasma, relates to film preparation field.
一种微波氢等离子体制备金属硅化物薄膜的方法,用于薄膜制备领域。
2
Polycrystalline nickel silicidefilm formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements.
本文研究了在薄二氧化硅层上快速热退火(RTA)形成的多晶硅化镍膜的电特性。
3
In particular, when the refractory metal silicidefilm is a tungsten silicidefilm, the concentration of cu is preferable that it is in the range of 0.1 to 1.0 wt. %.