The results of negative resistance effect and transient characteristics of a SOI structure prove that the program can correctly simulate the main phenomena caused by self heating effect.

Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.

Feature: Good self-heating, high capacitance rate, low loss, high resistance current strike rate, high reliability. Available for automatic insertion.