This method can be used to directly write many different types of metal or semiconductor features on Si substrates with sub 50 nanometer linewidth.
用这种方法可以在硅表面直接书写线宽度低于50纳米的多种金属和半导体组成的纳米结构。
2
This paper firstly gives a brief review about the history of amorphous semiconductor and the rapid progress in hydrogenated amorphous silicon (a-Si: h) film in recent years.
本文首先简要地回顾了非晶半导体的历史和近年来含氢非晶硅瞋的迅速进展。
3
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.