This paper analyses the relationship between node Capacitance of Al-gate and Si-gate CMOS structure and geometric layout, material characteristics, physical and technological parameters in details;
本文仔细地分析了铝栅和条状硅栅CM。S结构的节点电容与几何结构、物理、材料和工艺参数关系；
2
Under this way, the gate length and thickness of Si island of DG device show many different scaling limits for various elements.
在这种方法下，由于各种因素的影响，双栅器件的栅长、硅岛厚度呈现出不同的缩减限制。
3
The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.