The structure, which is fabricated on the SOI material, and its fabrication process have been designed based on the theoretical analysis.

In order to improve the uniformity of the thin film of silicon, the interface of hetero-junction of SOI material was used as the interface of etch self-stopping.

SOG material, as traditional SOI material, has much excellent electronics property, for example, SOG circuit has the advantage of high switch speed, high density, low voltage, low power and so on.