HBT self-aligned technology with a perpendicular side-wall mesa has been proposed.
本文提出了一种制作HBT采用的垂直台面结构自对准工艺。
2
The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricate high-performance complementary bipolar circuits.
该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容,可用于制造高性能的互补双极电路。
3
In addition, the poly tiles themselves increase the thickness of the isolation between active silicon regions when it must serve as a self-aligned blocking layer for an ion implantation step.