英语词汇saturation region怎么读，是什么意思，单词翻译、读音、固定搭配用法和短语词组及例句-英汉双解词典

单词

saturation region

释义

saturation region

美/ ?s?t???re??n ?ri?d??n /

简明释义

饱和区：在半导体器件中，电流与电压之间的关系达到饱和状态的区域，通常指晶体管的工作区域。

网络释义

1
?饱和区
... 与输出电压 VCB 间的关系ò 在输出特性曲线中，可以区分出三个区域，即作用区（Active regi on）、饱和区（Saturation region）与截止区（Cut-off region）： q作用区：E-B 接面为顺向偏压，C-B 接面为反向偏压，电晶体在此区域内失真最小；在底端，IE＝0，...
2
[电子]?饱和区域
... satellite assisted communication 人造卫星通信 saturation region 饱和区域 sawtooth current 锯齿波形电流 ...

短语

1
Velocity saturation region
速度饱和区
2
transistor saturation region
晶体管饱和区
3
servovalve flow saturation region
伺服阀流量饱和区

双语例句

1
Thus, operating even under lower voltage of power source, each transistor can still be operated at saturation region normally.
因此即使在低电源电压操作下，各晶体管仍可正常地在饱和区工作。
2
After an external fault of transformer is cleared, the transient flux may enter into the saturation region, and a recovery inrush may be produced.
变压器外部故障切除后，暂态磁通可能超过变压器铁心的饱和点，从而产生一定的恢复性涌流。
3
Simulation results show that the model with channel-length modulation effects included agrees with the measured I-V characteristics in the saturation region.
计算结果表明，计入沟道长度调制效应后的直流模型在饱和区与实测的I-V特性较为吻合。

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单词	saturation region
释义	saturation region 美/ ?s?t???re??n ?ri?d??n / 简明释义饱和区：在半导体器件中，电流与电压之间的关系达到饱和状态的区域，通常指晶体管的工作区域。网络释义 1 ?饱和区 ... 与输出电压 VCB 间的关系ò 在输出特性曲线中，可以区分出三个区域，即作用区（Active regi on）、饱和区（Saturation region）与截止区（Cut-off region）： q作用区：E-B 接面为顺向偏压，C-B 接面为反向偏压，电晶体在此区域内失真最小；在底端，IE＝0，... 2 [电子]?饱和区域 ... satellite assisted communication 人造卫星通信 saturation region 饱和区域 sawtooth current 锯齿波形电流 ... 短语 1 Velocity saturation region 速度饱和区 2 transistor saturation region 晶体管饱和区 3 servovalve flow saturation region 伺服阀流量饱和区双语例句 1 Thus, operating even under lower voltage of power source, each transistor can still be operated at saturation region normally. 因此即使在低电源电压操作下，各晶体管仍可正常地在饱和区工作。 2 After an external fault of transformer is cleared, the transient flux may enter into the saturation region, and a recovery inrush may be produced. 变压器外部故障切除后，暂态磁通可能超过变压器铁心的饱和点，从而产生一定的恢复性涌流。 3 Simulation results show that the model with channel-length modulation effects included agrees with the measured I-V characteristics in the saturation region. 计算结果表明，计入沟道长度调制效应后的直流模型在饱和区与实测的I-V特性较为吻合。
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