This structure is suitable for breakdown voltage below 300V to obtain ultra-low specificon-resistance.
在低于300V击穿电压条件下这种结构使VDMOS具有超低的比导通电阻。
2
In order to obtain good compromise of the breakdown voltage and the specificon-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.
The procedure for insulation resistance testing consists of preparing, conditioning, and measuring the sample. Details may vary, based onspecific test methods.