Two typical master-slave type D flip-flop of strong hardness to SingleEventUpset(SEU) for radiation environment are introduced.
介绍了两种已有的主从型边沿D触发器，它们具有很强的抗单粒子翻转能力。
2
Expermental methods were emphatically described for measuring the proton SingleEventUpset (SEU) cross section in Static Random Access Memories (SRAMs).