The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, singleelectrontunneling were described with singleelectron transistor(SET) as the research object.
以单电子晶体管为研究对象,系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
2
Based on the orthodox theory, a model of a singleelectron transistor (SET) of metallic tunneling junctions is built using the master equation method.
在正统理论的基础上,使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
3
Three kinds of different new approaches to construct nanometer sized double barrier tunneling junctions for room temperature singleelectrontunneling studies were reported.