A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
2
We have placed the nanotubes between magnetic electrodes and we have shown that the direction of a singleelectron spin caught on the nanotube can be controlled directly by an electric potential.
我们把碳纳米管放在磁性电极之间。然后我们发现被碳纳米管捕捉的单电子自旋方向可以被电势直接控制。
3
Evidence suggests that pumping in too much oxygen too quickly can strip the molecule of a singleelectron, creating a free radical.