An experimental instrument is set up to observe the energy distribution of electrons (mainly secondaryelectrons) on the anode screen in the field emission.
我们搭建了一套实验装置，用来观察场发射中到达阳极屏上的电子(主要是二次电子)的能量分布。
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The results show that no matter the range of the implanted ion itself or secondary effect sphere of secondaryelectrons, radical diffusion, thermal spike, cascade atoms and shock wave etc.
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondaryelectrons by impact ionization.