The dependence of etching rate and profile on the vacuum pressure, RF pow-er, gas composition and flow rate, and electrode temperature is analyzed.
分析了真空压力、射频功率、气体组合及其流量和电极温度对刻蚀速率、刻蚀剖面的影响;
2
It is proved that the uniformity of etch rate can be improved and the effect of micro load can be decreased by adjusting the value of chamber pressure, gas flowrate and RF power properly.