A method is presented for measuring the minority recombinationLifetime in MOS fet's by charge pumping effect.
本文介绍了应用电荷抽取效应测量MOS晶体管中少子复合寿命的方法。
2
Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
3
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.