The invention improves puncturevoltage characteristic of the semiconductor device, in addition, collision ionization in the semiconductor device can be avoided.
本发明改善了半导体器件的击穿电压特性，此外，在本发明的半导体器件中可以避免碰撞电离现象的发生。
2
On the basis of primary factors influencing puncture of mediums, the capacity performance index of voltage resisting and puncture test is emphatically pointed out.
根据影响绝缘材料击穿的主要因素，着重阐述了交流耐压击穿装置的容量指标问题。
3
On the basis of primary factors influencing puncture of mediums, this paper emphatically points out the capacity performance index of voltage-resisting of puncture tester.