A new analytical model for describing the growth kinetics of Rapid Thermal Oxidationof Si with the use of Boltzmann-Mamtano transformation is reported.
本文采用玻尔兹曼-曼特诺变换方法，得到了一个新的描述硅快速热氧化生长动力学的解析模型。
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The growth kinetics of rapid thermal oxidation have been studied and the temperature activation energies for the oxidation growth rate have also been calculated.