The plasma sourceion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
The invention relates to an ion implanter (imp) comprising a pulsed plasma source (SPL), a substrate support plate (PPS) and a power supply (ALT) for said plate.
本发明涉及离子注入机imp,包括脉冲等离子体源spl、衬底支承台PPS和所述台的电源alt。
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The pulsed GD ionsource has the characters of high ion production and working stability. It is suitable for direct analysis of metal in alloy.