High dielectric constant thin films have been used in high-density dynamic randomaccessmemories widely.
高介电常数薄膜广泛应用于动态随机存储器中。
2
The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static RandomAccessMemories(SRAMs).
应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。
3
Ferroelectric fatigue is much fatal for the electric apparatus based on the switchable polarization, such as non-volatile randomaccessmemories (NVFRAM).