Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicongate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
2
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
3
This paper briefly describes the structure and principle of newly developed linear-array buried-channel CCD (BCCD) with 3-phase, polysilicon overlay-gate, and, experimental results are presented.