Electric field applied perpendicularly to the layer of quantum wells can change the optical properties(abstraction, reflection and photoluminescence)of semiconductor quantumwellstructures.
The differences in the structures and properties of multiple quantumwell between different areas on a wafer were achieved using selective partial disordering.
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
3
It is indicated that the laser structures with many quantum Wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.