In this paper the two-dimension analysis is given for transversal PNPTransistor.
本文对横向PN P晶体管进行了二维分析。
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Major conclusion is: it is possible to achieve ideal vertical PNPtransistor by appropriately re-arranging process steps without affecting the original structure.
We try to obtain the common-base current gain a of the parasitic PNPtransistor from the eloping profile of the collector region including the effect of buried-layer.