It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PNjunctiondiode by experiment.
The invention belongs to the technical field of microelectronics, and in particular discloses a PN (positive-negative) junction and Schottky junction mixed type diode and a preparation method thereof.
本发明属于微电子技术领域，具体公开了一种PN结和肖特基结混合式二极管及其制备方法。
3
Semiconductor diode is a PNjunction together with the corresponding client leads and package composition shell.