Differing from the usual model, the present model of PNdiode consists of the effect of shunt conductance on the current.
与通常使用的PN结二极管模型不同，本文模型考虑了并联电导对电流的影响。
2
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
The invention belongs to the technical field of microelectronics, and in particular discloses a PN (positive-negative) junction and Schottky junction mixed type diode and a preparation method thereof.