Single Hard Errors and functional error were observed in SRAMs under proton irradiation. The explanation is reasonable for the relation between SHE and device integration scale.

The Change in electric properties of back-field silicon solar cell was investigated under the proton irradiation followed by thermo - cycling by means of ground-based simulation for space environment.

There was mass loss of silicon rubber after proton radiation and the mass loss percent increased with the increase of irradiation fluence.