A novel kinetics model for dc reactivesputtering was proposed.
提出了一个新的直流反应溅动力学模型。
2
For reactivesputtering, the gradient films with varying ratio of chemical component can be prepared by changing gas flow rate continuously.
对于反应溅射,可通过连续改变反应气体流量制得化学成分比连续变化的梯度薄膜。
3
Through the technology of RF and DC reactivesputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.