The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactiveionetching (RIE).
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
2
Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactiveionetching(ECR-RIE) equipment to improve its property of weave.