It can be used for single ion implantation, ionbeam mixing, single ion or reactiveionbeam sputter-deposition and ion beam enhanced deposition.
可用于单离子注入,离子束混合,单离子或反应离子束溅射淀积以及离子束增强淀积。
2
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ionbeam etching (IBE) and reactiveion etching (RIE).
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
3
High quality ITO films are prepared onto K9 glass substrates by oxygen ion-assisted electron beamreactive evaporation.