Portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
所述氧化层的部分被移除，以使所述沟槽填充的氧化层作为第一多晶硅层基本平面化。
2
Through a CMP process, portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.