A new phononmodel of excitation martensitic transformation is presented.
本文提出了一个新的激发马氏体相变的声子模型。
2
The physical model and theoretical method for studying the phonon excitation of stackingfaultimpurity complex with the motion of dislocation are proposed .
提出了研究杂质层错复合体声子激发及其与位错运动相关的模型及理论计算方法;
3
The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.