Embodiments relate to a nonvolatilememorydevice and a method for manufacturing the same.
本发明实施例涉及一种非易失性存储器件及其制造方法。
2
In the nonvolatilememorydevice, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
在非易失性存储装置中，可以通过将擦除电压施加到位线或共源线来从存储晶体管擦除数据。
3
Nonvolatilememorydevice and method of operating the same are provided. Provided is a method of reliably operating a highly-integrated nonvolatilememorydevice.