The processes involve the initial formation nanostructured support elements during a first annealingstep.
所述工艺涉及第一退火步骤期间纳米结构化支承元件的初始形成。
2
The second step is the image segmentation algorithm, whose key is the improved multiple-value simulated annealing technique.
第二步是基于模型参数的图象分割算法，其核心是一个改进的多值模拟退火技术。
3
The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.