Threshold voltage window is approx 17V, and this transistor has nondestructivereadout characteristic.
这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。
2
Resistive random access memory (RRAM) is anticipated to be the promising next generation non-volatile memory operating with fast switching speed, low power consumption and nondestructivereadout.