It was revealed that the crystallographicorientation, dimensional sizes and boundaries of ferroelectric grains significantly affect the domain structures of thin films.
发现薄膜中晶粒的结晶取向、晶粒大小和晶粒边界条件直接影响其电畴的形态复杂程度。
2
Experiments are performed to confirm the chemical etching method for defining the crystallographicorientation of silicon single crystals.
通过实验肯定了硅单晶的化学侵蚀定向方法,找出抛光液的最佳配比及抛光时间。
3
A general mechanism of crystallographic axis orientation transition of REBCO LPE film is suggested.