A novel structure with a double step buriedoxide SOI (D-SBOSOI) is developed on the basis of single step buriedoxide structure.
在单面阶梯埋氧型soi结构的基础上,提出了一种双面阶梯埋氧soi新结构。
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Substituting the electric field distributions into the formula we ve induced, we got the trapped charge distribution inside the buriedoxide during total irradiation under different bias states.