For isolated LDMOS devices, the resistance between the lateral isolation wall (32) (tied to the source) and the buriedlayer (24) is reduced, thereby reducing substrate injection current.
A buriedlayer (7) is provided as a collector connection area which joins the collector contact (6) to a collector area (14).
埋层(7)作为集电极连接区域提供,用于连接集电极接触(6)和集电极区(14)。
3
A computer program has been set up to simulate the formation process and final structure of AlN layer on the basis of the formation mechanism of AlN buriedlayer by ion implantation.