A buried layer (7) is provided as a collector connection area which joins the collector contact (6) to a collector area (14).
埋层(7)作为集电极连接区域提供,用于连接集电极接触(6)和集电极区(14)。
3
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.