The mechanics of the potential well of buriedchannel charge coupled device (CCD) are described.
对埋沟电荷耦合器件（CCD）的势阱形成机理进行了描述。
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This paper briefly describes the structure and principle of newly developed linear-array buried-channelCCD (BCCD) with 3-phase, polysilicon overlay-gate, and, experimental results are presented.