The invention can reduce parasiticresistance of the semiconductor device.
本发明能够减少半导体装置的寄生电阻。
2
While the gate length of PHEMT device is adequately short, the parasiticresistance across the width of the gate limits the PHEMT device performance.
当PHEMT器件的栅长缩短到足够短的时候，沿着栅宽方向的寄生电阻会影响PHEMT器件的性能。
3
In the process of SC design, an approach combining parasiticresistance pre-mutating and SC negative resistance is followed to achieve a simple filter circuit.